| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2022 | Deposition of high-quality Ge film on Si by PECVD using GeCl4/H2 for fabricating near-infrared photodiodes | Jyun-You Lai; Shang-Che Tsai; Ming-Wei Lin; Szu-yuan Chen | Materials Science in Semiconductor Processing 148:106740 |
