| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
| 2009 | Defect selective passivation in GaN epitaxial growth for light emitting diode application | Lo, M. -H.; Tu, P. -M.; Wang, C. -H.; Cheng, Y. -J.; Hung, C. -W.; Hsu, S. -C.; Kuo, H. -C.; Zan, H. -W.; Wang, S. -C.; Chang, C. -Y.; Liu, C. -M. | APPLIED PHYSICS LETTERS 95, 211103 | | | |
| 2009 | High efficiency light emitting diode with anisotropically etched GaN-sapphire interfac | Lo, M. -H.; Tu, P. -M.; Wang, C. -H.; Hung, C. -W.; Hsu, S. -C.; Cheng, Y. -J.; Kuo, H. -C.; Zan, H. -W.; Wang, S. -C.; Chang, C. -Y. | APPLIED PHYSICS LETTERS 95, 041109 | | | |
| 2010 | Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer | Lo, M. -H.; Tu, P. -M.; Wang, C. -H.; Cheng, Y. -J.; Hung, C. -W.; Hsu, S. -C.; Kuo, H. -C. | | | | |
| 2010 | Output power enhancement of light-emitting diodes with defect passivation layer | Lo, M. -H.; Tu, P. -M.; Wang, C. -H.; Cheng, Y. -J.; Hung, C. -W.; Hsu, S. -C.; Kuo, H. -C. | Proceedings of SPIE 7602-69, 76021X | | | |
