| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2015 | Intrinsic electron mobility exceeding 103 cm2/Vs in multilayer InSe FETs | S. Sucharitakul; N. J. Goble; U. R. Kumar; R. Sankar; Z. Bogorad; F. C. Chou; Y.-T. Chen; X. P. A. Gao | NANO LETTERS 10(6), 3815-3819 |
