Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer Doping Technique

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33130

Title:	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer Doping Technique
Authors:	Chien, Jui-Fen Liao, Hua-Yang Yu, Sheng-Fu Lin, Ray-Ming Shiojiri, Makoto Shyue, Jing-Jong Chen, Miin-Jang
Issue Date:	2013
Relation:	ACS Applied Materials & Interfaces 5 [2] 227-232
URI:	http://ir.sinica.edu.tw/handle/201000000A/33130
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

Show full item record

Last Week
0

Last month
3

checked on Jun 15, 2025

Check