Growth and characterization of InP/InGaAs p-quantum well infrared Photodetector with extremely thin quantum wells

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33399

Title:	Growth and characterization of InP/InGaAs p-quantum well infrared Photodetector with extremely thin quantum wells
Authors:	Sengupta, D. K. Jackson, S. L. Curtis, A. P. Fang, W. Malin, J. I. Horton, T. U. Kuo, H. C. Moy, A. Miller, J. Hsieh, K. C. Cheng, K. Y. Chen, H. Adesida, I. Chuang, S. L. Feng, M. Stillman, G. E. Wu, W. Tucker, J. Chang, Y. C. Li, L. Liu, H. C.
Issue Date:	1997
Relation:	JOURNAL OF ELECTRONIC MATERIALS 26, 1382
URI:	http://ir.sinica.edu.tw/handle/201000000A/33399
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0361-5235&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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