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  1. Scholars Hub of the Academia Sinica
  2. 數理科學組
  3. 應用科學研究中心
Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34785
DC FieldValueLanguage
dc.contributor應用科學研究中心-
dc.contributor.authorKuan-Chao Chen-
dc.contributor.authorChong-Rong Wu-
dc.contributor.authorXiang-Rui Chang-
dc.contributor.authorSi-Chen Lee-
dc.contributor.authorShih-Yen Lin-
dc.date.accessioned2020-10-20T06:44:57Z-
dc.date.available2020-10-20T06:44:57Z-
dc.date.issued2016-04-19-
dc.identifier.urihttp://ir.sinica.edu.tw/handle/201000000A/34785-
dc.description.sponsorship應用科學研究中心-
dc.language.isoen-
dc.titleEnhanced Field-Effect Mobility of MoS2 Transistors Prepared by Chemical Vapor Deposition with Low-Power Oxygen Plasma Treatment-
dc.typeconference paper-
dc.relation.conferenceGraphene 2016 (Genova, Italy : Phantoms Foundation)-
dc.description.note已出版;有審查制度;具代表性-
item.languageiso639-1en-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_5794-
item.openairetypeconference paper-
item.cerifentitytypePublications-
Appears in Collections:應用科學研究中心
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