Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43846

Title:	Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties
Authors:	Yang, T. H. Chen, C. H. Chatterjee, A. Li, H. Y. Lo, J. T. Wu, C. T. Chen, K. H. Chen, L. C.
Issue Date:	2003-09
Relation:	Chemical Physics Letters 379(1-2), 155-161
URI:	http://ir.sinica.edu.tw/handle/201000000A/43846
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0009-2614&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1016/j.cplett.2003.08.001
Appears in Collections:	原子與分子科學研究所

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