High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43898

Title:	High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
Authors:	Hsiao, C. L. Liu, T. W. Wu, C. T. Hsu, H. C. Chen, L. C. Gällström, A. Holtz, P. Hsu, G. M. Chen, K. H.
Issue Date:	2008-03-01
Relation:	APPLIED PHYSICS LETTERS 92, 111914
URI:	http://ir.sinica.edu.tw/handle/201000000A/43898
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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