Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44120

Title:	Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
Authors:	Junaid, M. Lundin, D. Palisaitis, J. Hsiao, C. L. Darakchieva, V. Jensen, J. Persson, P. O. A. Sandstrom, P. Lai, W. J. Chen, L. C. Chen, K. H. Helmersson, U. Hultman, L. Birch, J.
Issue Date:	2011
Relation:	JOURNAL OF APPLIED PHYSICS 110, 123519
URI:	http://ir.sinica.edu.tw/handle/201000000A/44120
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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