Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/44991

題名:	Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons
作者:	F. D. Natterer Y. Zhao J. Wyrick Y.-H. Chan W.-Y. Ruan M. Y. Chou K. Watanabe T. Taniguchi N. B. Zhitenev J. A. Stroscio
公開日期:	2015-06
關聯:	PHYSICAL REVIEW LETTERS 114(24), 245502
URI:	http://ir.sinica.edu.tw/handle/201000000A/44991
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0031-9007&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://journals.aps.org/prl/pdf/10.1103/PhysRevLett.114.245502
顯示於：	原子與分子科學研究所

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