Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/73686

Title:	Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer
Authors:	Chuang, Chiashain Liang, C.-T. Kim, Gil-Ho Elmquist, R.E. Yang, Y. Hsieh, Y.P. Patel, Dinesh K. Watanabe, K. Taniguchi, T. Aoki, N.
Issue Date:	2018-09
Relation:	Carbon 136, 211-216
URI:	http://ir.sinica.edu.tw/handle/201000000A/73686
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0008-6223&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1016/j.carbon.2018.04.067
Appears in Collections:	原子與分子科學研究所

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