The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/77694

Title:	The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy
Authors:	Y.J. Chen Y.C Jhong P.Y. Chuang C.W. Chong J.C. Andrew Huang V. Marchenkovf H.C. Han
Issue Date:	2019-12
Relation:	Chinese Journal of Physics 62, 65-71
URI:	http://ir.sinica.edu.tw/handle/201000000A/77694
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0577-9073&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	https://www.sciencedirect.com/science/article/pii/S0577907319308767
Appears in Collections:	應用科學研究中心

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