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Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/77716
Title: Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers
Authors: C. T. Hsieh
P. J. cheng
C. H. Lin
S. W. Chang 
Issue Date: 2019-02-02
Conference: Photonics West (San Francisco CA, USA : SPIE)
URI: http://ir.sinica.edu.tw/handle/201000000A/77716
Appears in Collections:應用科學研究中心

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