Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/78207

題名:	Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor
作者:	C. R. P. Inbaraj V. K. Gudelli R. J. Mathew R. K. Ulaganathan R. Sankar H. Y. Lin H.-I Lin Y.-M. Liao H.-Y. Cheng K.-H. Lin F. C. Chou Y.-T. Chen C.-H. Lee G.-Y. Guo Y.-F. Chen
公開日期:	2019-07-17
關聯:	ACS APPLIED MATERIALS & INTERFACES 11(27), 24269-24278
URI:	http://ir.sinica.edu.tw/handle/201000000A/78207
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	https://pubs.acs.org/doi/10.1021/acsami.9b06433
顯示於：	物理研究所

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