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  1. Scholars Hub of the Academia Sinica
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  3. 原子與分子科學研究所
Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/81366
Title: Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors
Authors: Gaurav Pande
J. Y. Siao
W. L. Chen
C. J. Lee
Raman Sankar 
Y. M. Chang
C. D. Chen 
W. H. Chang
F. C. Chou
Minn-Tsong Lin 
Issue Date: 2020-04-01
Relation: ACS APPLIED MATERIALS & INTERFACES 12(16), 18667-18673
URI: http://ir.sinica.edu.tw/handle/201000000A/81366
ISSN: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:原子與分子科學研究所

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