Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/81366

Title:	Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors
Authors:	Gaurav Pande J. Y. Siao W. L. Chen C. J. Lee Raman Sankar Y. M. Chang C. D. Chen W. H. Chang F. C. Chou Minn-Tsong Lin
Issue Date:	2020-04-01
Relation:	ACS APPLIED MATERIALS & INTERFACES 12(16), 18667-18673
URI:	http://ir.sinica.edu.tw/handle/201000000A/81366
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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