Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/87831

Title:	Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics
Authors:	Tzu-Hung Yang Zhe-Zhang Lin Shang-Che Tsai Jia-Zhi Dai Shih-Ming Chen Ming-Wei Lin Szu-yuan Chen
Issue Date:	2023-08
Relation:	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 162:107515
URI:	http://ir.sinica.edu.tw/handle/201000000A/87831
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1369-8001&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	https://doi.org/10.1016/j.mssp.2023.107515
Appears in Collections:	原子與分子科學研究所

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