http://ir.sinica.edu.tw/handle/201000000A/88058| Title: | Persistent Charge Storage and Memory Operation of Top-Gate Transistors Solely Based on Two-dimensional Molybdenum Disulfide | Authors: | Po-Cheng Tsai Coung-Ru Yan Shoou-Jinn Chang Shu-Wei Chang Shih-Yen Lin |
Issue Date: | 2023-05 | Relation: | NANOTECHNOLOGY 34(30), 305701 | URI: | http://ir.sinica.edu.tw/handle/201000000A/88058 |
| Appears in Collections: | 應用科學研究中心 |
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