Skip navigation
  • 中文
  • English

DSpace CRIS

  • DSpace logo
  • Home
  • Organizations
  • Researchers
  • Research Outputs
  • Projects
  • Explore by
    • Organizations
    • Researchers
    • Research Outputs
    • Projects
  • Academic & Publications
  • Sign in
  • 中文
  • English
  1. Scholars Hub of the Academia Sinica
  2. 數理科學組
  3. 應用科學研究中心
Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/88083
Title: Memory Operations of Multi-Layer Molybdenum Disulfide Top-Gate Transistors
Authors: Bo-Hao Chen
Po-Cheng Tsai
Coung-Ru Yan
Shoou-Jinn Chang
Shih-Yen Lin 
Issue Date: 2022-12-02
Conference: OPTIC 2022 (Chungli, Taiwan : National Central University)
URI: http://ir.sinica.edu.tw/handle/201000000A/88083
Appears in Collections:應用科學研究中心

Show full item record

Page view(s)

52
checked on Aug 14, 2025

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Explore by
  • Academic & Publications
  • Organizations
  • Researchers
  • Research Outputs
  • Projects
Build with DSpace-CRIS - Extension maintained and optimized by Logo 4SCIENCE Feedback