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Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33398
Title: Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm
Authors: Sengupta, D. K.
Jackson, S. L
Curtis, A. P.
Fang, W.
Malin, J. I.
Horton, T. U.
Hartman, Q.
Kuo, H. C.
Thomas, S.
Miller, J.
Hsieh, K. C.
Adesida, I.
Chuang, S. L.
Feng, M.
Stillman, G. E.
Chang, Y. C.
Wu , W.
Tucker, J.
Chen, H.
Gibson, J. M.
Mazumder, J.
Li, L.
Liu, H. C.
Issue Date: 1997
Relation: JOURNAL OF ELECTRONIC MATERIALS 26, 1376
URI: http://ir.sinica.edu.tw/handle/201000000A/33398
ISSN: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0361-5235&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:應用科學研究中心

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