Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33398

題名:	Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm
作者:	Sengupta, D. K. Jackson, S. L Curtis, A. P. Fang, W. Malin, J. I. Horton, T. U. Hartman, Q. Kuo, H. C. Thomas, S. Miller, J. Hsieh, K. C. Adesida, I. Chuang, S. L. Feng, M. Stillman, G. E. Chang, Y. C. Wu , W. Tucker, J. Chen, H. Gibson, J. M. Mazumder, J. Li, L. Liu, H. C.
公開日期:	1997
關聯:	JOURNAL OF ELECTRONIC MATERIALS 26, 1376
URI:	http://ir.sinica.edu.tw/handle/201000000A/33398
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0361-5235&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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