Physical and Barrier Properties of Amorphous Silicon-Oxycarbide Deposited by PECVD from Octamethylcyclotetrasiloxane

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/34024

題名:	Physical and Barrier Properties of Amorphous Silicon-Oxycarbide Deposited by PECVD from Octamethylcyclotetrasiloxane
作者:	C.C. Chiang M.C. Chen L.J. Li Z.C. Wu S.M. Jang M.S. Liang
公開日期:	2004
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY 151, G612
URI:	http://ir.sinica.edu.tw/handle/201000000A/34024
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0013-4651&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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