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Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34027
Title: Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectrics
Authors: Z.C. Wu
C.C. Chiang
W.H. Wu
M.C. Chen
S. M. Jeng
L.J. Li
S. M. Jang
C.H. Yu
M.S. Liang
Issue Date: 2001
Relation: IEEE ELECTRON DEVICE LETTERS 22, 263
URI: http://ir.sinica.edu.tw/handle/201000000A/34027
ISSN: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0741-3106&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:應用科學研究中心

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