Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectrics

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/34027

題名:	Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectrics
作者:	Z.C. Wu C.C. Chiang W.H. Wu M.C. Chen S. M. Jeng L.J. Li S. M. Jang C.H. Yu M.S. Liang
公開日期:	2001
關聯:	IEEE ELECTRON DEVICE LETTERS 22, 263
URI:	http://ir.sinica.edu.tw/handle/201000000A/34027
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0741-3106&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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