MBE Grown High k Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34491

Title:	MBE Grown High k Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics
Authors:	Lee, W. G. Lee, Y. J. Wu, Y. D. Chang, P. Hsu, Y. L. Chen, C. P. Mannaerts, J. P. Maikap, S. Liu, C. W. Lee, L. S. Hsieh, W. Y. Tsai, M. J. Lin, S. Y. Lo, R. L. Hong, M. Kwo, J.
Issue Date:	2004
Conference:	MBE-Taiwan, 2004 (國立中山大學 : 國立中山大學)
URI:	http://ir.sinica.edu.tw/handle/201000000A/34491
Appears in Collections:	應用科學研究中心

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