Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/43995

題名:	Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
作者:	Yang, Fu-Hsiang Hwang, Jih-Sheng Yang, Ying-Jay Chen, Kuei-Hsien Wang, Jih-Hsiang
公開日期:	2002-11
關聯:	Japanese Journal of Applied Physics 41(11B):L1321
URI:	http://ir.sinica.edu.tw/handle/201000000A/43995
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-4922&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1143/jjap.41.l1321
顯示於：	原子與分子科學研究所

顯示文件完整紀錄

上周
1

上個月

checked on 2025/6/10

檢查