Band Gap Engineering of Chemical Vapor Deposited Graphene by in-situ BN Doping

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/44311

題名:	Band Gap Engineering of Chemical Vapor Deposited Graphene by in-situ BN Doping
作者:	Chang, Cheng-Kai Kataria, Satender Kuo, Chun-Chiang Ganguli, Abhijit Wang, Bo-Yao Hwang, Jeong-Yuan Huang, Kay-Jay Yang, Wei-Hsun Wang, Sheng-Bo Chuang, Cheng-Hao Chen, Mi Huang, Ching-I Pong, Way-Faung Song, Ker-Jar Chang, Shoou-Jinn Guo, Jinghua Tai, Yian Tsujimoto, Masahiko Isoda, Seiji Chen, Chun-Wei Chen, Li-Chyong Chen, Kuei-Hsien
公開日期:	2012-12-01
關聯:	ACS Nano 7 (2),1333–1341
URI:	http://ir.sinica.edu.tw/handle/201000000A/44311
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1936-0851&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://pubs.acs.org/doi/abs/10.1021/nn3049158
顯示於：	原子與分子科學研究所

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