Effects of Electrostatic Fields and Charge Doping on the Linear Bands in Twisted Graphene Bilayers

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/44436

題名:	Effects of Electrostatic Fields and Charge Doping on the Linear Bands in Twisted Graphene Bilayers
作者:	Xian, L. Barraza-Lopez, S. Chou, M. Y.
公開日期:	2011-08-01
關聯:	PHYSICAL REVIEW B 84(7), 075425
URI:	http://ir.sinica.edu.tw/handle/201000000A/44436
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1098-0121&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://prb.aps.org/abstract/PRB/v84/i7/e075425
顯示於：	原子與分子科學研究所

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