http://ir.sinica.edu.tw/handle/201000000A/44767| DC Field | Value | Language |
|---|---|---|
| dc.contributor | 原子與分子科學研究所 | - |
| dc.contributor.author | M. Junaid | - |
| dc.contributor.author | D. Lundin | - |
| dc.contributor.author | J. Palisaitis | - |
| dc.contributor.author | C. L. Hsiao | - |
| dc.contributor.author | V. Darakchieva | - |
| dc.contributor.author | J. Jensen | - |
| dc.contributor.author | P. O. A. Persson | - |
| dc.contributor.author | P. Sandstrom | - |
| dc.contributor.author | W. J. Lai | - |
| dc.contributor.author | L. C. Chen | - |
| dc.contributor.author | K. H. Chen | - |
| dc.contributor.author | U. Helmersson | - |
| dc.contributor.author | L. Hultman | - |
| dc.contributor.author | J. Birch | - |
| dc.date.accessioned | 2020-10-26T03:25:02Z | - |
| dc.date.available | 2020-10-26T03:25:02Z | - |
| dc.date.issued | 2011 | - |
| dc.identifier.issn | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT | - |
| dc.identifier.uri | http://ir.sinica.edu.tw/handle/201000000A/44767 | - |
| dc.description.sponsorship | 原子與分子科學研究所 | - |
| dc.language.iso | en | - |
| dc.relation.ispartof | JOURNAL OF APPLIED PHYSICS 110, 123519 | - |
| dc.title | Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering | - |
| dc.type | journal article | - |
| dc.description.note | 已出版;[SCI];有審查制度;具代表性 | - |
| item.languageiso639-1 | en | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.openairetype | journal article | - |
| item.cerifentitytype | Publications | - |
| Appears in Collections: | 原子與分子科學研究所 | |
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