Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/44767

題名:	Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
作者:	M. Junaid D. Lundin J. Palisaitis C. L. Hsiao V. Darakchieva J. Jensen P. O. A. Persson P. Sandstrom W. J. Lai L. C. Chen K. H. Chen U. Helmersson L. Hultman J. Birch
公開日期:	2011
關聯:	JOURNAL OF APPLIED PHYSICS 110, 123519
URI:	http://ir.sinica.edu.tw/handle/201000000A/44767
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	原子與分子科學研究所

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