Epitaxial Growth of Vertically Stacked p-MoS2/n-MoS2 Heterostructures by Chemical Vapor Deposition for Light Emitting Devices

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/45253

題名:	Epitaxial Growth of Vertically Stacked p-MoS2/n-MoS2 Heterostructures by Chemical Vapor Deposition for Light Emitting Devices
作者:	R. D. Nikam P. A. Sonawane R. Sankar Y.-T. Chen
公開日期:	2017
關聯:	NANO ENERGY 32, 454-462
URI:	http://ir.sinica.edu.tw/handle/201000000A/45253
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2211-2855&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1016/j.nanoen.2017.01.006
顯示於：	原子與分子科學研究所

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