Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/85391

Title:	Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling
Authors:	Lu, Yi-Ying Huang, Yan-Ting Chen, Jia-Ni Jhou, Jie Lan, Liang-Wei Kuo, Chien-Cheng Hsu, Jui-Hung Hsieh, Shang-Hsien Chen, Chia-Hao Sankar, Raman
Issue Date:	2022
Relation:	ACS Applied Nano Materials 5(2), 1911-1916
URI:	http://ir.sinica.edu.tw/handle/201000000A/85391
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2574-0970&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1021/acsanm.1c03532
Appears in Collections:	物理研究所

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