Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

DC 欄位	值	語言
dc.contributor	物理研究所	-
dc.contributor.author	Lu, Yi-Ying	-
dc.contributor.author	Huang, Yan-Ting	-
dc.contributor.author	Chen, Jia-Ni	-
dc.contributor.author	Jhou, Jie	-
dc.contributor.author	Lan, Liang-Wei	-
dc.contributor.author	Kuo, Chien-Cheng	-
dc.contributor.author	Hsu, Jui-Hung	-
dc.contributor.author	Hsieh, Shang-Hsien	-
dc.contributor.author	Chen, Chia-Hao	-
dc.contributor.author	Sankar, Raman	-
dc.date.accessioned	2023-03-29T06:27:30Z	-
dc.date.available	2023-03-29T06:27:30Z	-
dc.date.issued	2022	-
dc.identifier.issn	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2574-0970&DestApp=JCR&RQ=IF_CAT_BOXPLOT	-
dc.identifier.uri	http://ir.sinica.edu.tw/handle/201000000A/85391	-
dc.description.sponsorship	物理研究所	-
dc.language.iso	en	-
dc.relation.ispartof	ACS Applied Nano Materials 5(2), 1911-1916	-
dc.title	Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling	-
dc.type	journal article	-
dc.identifier.url	http://dx.doi.org/10.1021/acsanm.1c03532	-
dc.description.note	已出版;沒有審查制度	-
item.grantfulltext	none	-
item.languageiso639-1	en	-
item.fulltext	no fulltext	-
item.openairecristype	http://purl.org/coar/resource_type/c_6501	-
item.cerifentitytype	Publications	-
item.openairetype	journal article	-
crisitem.author.dept	Institute of Physics	-
crisitem.author.parentorg	Division of Mathematics and Physical Sciences	-
顯示於：	物理研究所

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