Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/85405

題名:	Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)
作者:	Harvey N. Cruzado John Symon C. Dizon Gennevieve M. Macam Rovi Angelo B. Villaos Thi My Duyen Huynh Liang-Ying Feng Zhi-Quan Huang Chia-Hsiu Hsu Shin-Ming Huang Hsin Lin Feng-Chuan Chuang
公開日期:	2021
關聯:	ACS Applied Electronic Materials 3(3), 1071-1079
URI:	http://ir.sinica.edu.tw/handle/201000000A/85405
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2637-6113&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1021/acsaelm.0c00907
顯示於：	物理研究所

顯示文件完整紀錄

checked on 2025/6/13

檢查