Analytical Modeling of Current Gain in Multiple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistors

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/90223

題名:	Analytical Modeling of Current Gain in Multiple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistors
作者:	M. Kumarl L. C. Hsueh S. W. Cheng S. W. Chang C. H. Wu
公開日期:	2023-07-10
關聯:	IEEE Transactions on Electron Devices 70(1), 343-349
URI:	http://ir.sinica.edu.tw/handle/201000000A/90223
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0018-9383&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1109/ted.2023.3289930
顯示於：	應用科學研究中心

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