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Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/90230
Title: High photoresponsivity MoS2 phototransistor through enhanced hole trapping HfO2 gate dielectric
Authors: Pei-Xuan Long
Yung-Yu La
Pei-Hao Kang
Chi-Huang Chuang
Yuh-Jen Cheng 
Issue Date: 2023-10-26
Relation: NANOTECHNOLOGY 35, 025204
URI: http://ir.sinica.edu.tw/handle/201000000A/90230
URL: https://iopscience.iop.org/article/10.1088/1361-6528/ad01c2/pdf
Appears in Collections:應用科學研究中心

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