| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2022 | Memory Operations of Multi-Layer Molybdenum Disulfide Top-Gate Transistors | Bo-Hao Chen; Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2023 | Multi-Layer Molybdenum Disulfide Memories | Po-Cheng Tsai; Coung-Ru Yan; Bo-Hao Chen; Shoou-Jinn Chang; Shu-Wei Chang; Shih-Yen Lin | ||||
| 2023 | Persistent Charge Storage and Memory Operation of Top-Gate Transistors Solely Based on Two-dimensional Molybdenum Disulfide | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | NANOTECHNOLOGY 34(30), 305701 | |||
| 2022 | Strategies for Low Contact Resistance of 2D Material Devices | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2022 | The Influence of Contact Metals on Epitaxially Grown Molybdenum Disulfide for Electrical and Optical Device Applications | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | NANOTECHNOLOGY 33(50), 505205 |
