| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2021 | Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS2/Graphene Heterostructures for Memory Device Applications | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | ACS Applied Materials & Interfaces 13(38), 45864-45869 | |||
| 2023 | Exploring the Influences of Non-2D Material Interfaces on Molybdenum Disulfide Transistors | Che-Jia Chang; Bo-Hao Chen; Tzu-Hsuan Chang; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2023 | In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | Scientific Reports 13(1), 9197 | |||
| 2020 | In-plane Gate Graphene Transistors Fabricated by Using Electron Beam Lithography | Chun-Wei Huang; Po-Cheng Tsai; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2020 | Luminescence Enhancement and Dual-Color Emission of Stacked Mono-layer 2D Materials | Po-Cheng Tsai; Hon-Chin Huang; Chun-Wei Huang; Shoou-Jinn Chang; Shih-Yen Lin | NANOTECHNOLOGY 31(36), 365702 | |||
| 2022 | Memory Operations of Multi-Layer Molybdenum Disulfide Top-Gate Transistors | Bo-Hao Chen; Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2023 | Molybdenum Disulfide Transistors Bearing All-2D-Material Interfaces: Device Performance Optimization and Influences of Interfaces and Passivation Layers | Che-Jia Chang; Bo-Hao Chen; Tzu-Hsuan Chang; Shoou-Jinn Chang; Shih-Yen Lin | ACS APPLIED ELECTRONIC MATERIALS 5(11), 6384-6391 | |||
| 2023 | Multi-Layer Molybdenum Disulfide Memories | Po-Cheng Tsai; Coung-Ru Yan; Bo-Hao Chen; Shoou-Jinn Chang; Shu-Wei Chang; Shih-Yen Lin | ||||
| 2023 | Performance Optimization of Molybdenum Disulfide Transistors: The Influence of Non-2D Material Interfaces | Che-Jia Chang; Bo-Hao Chen; Tzu-Hsuan Chang; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2023 | Persistent Charge Storage and Memory Operation of Top-Gate Transistors Solely Based on Two-dimensional Molybdenum Disulfide | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | NANOTECHNOLOGY 34(30), 305701 | |||
| 2022 | Strategies for Low Contact Resistance of 2D Material Devices | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | ||||
| 2022 | The Influence of Contact Metals on Epitaxially Grown Molybdenum Disulfide for Electrical and Optical Device Applications | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | NANOTECHNOLOGY 33(50), 505205 |
